260 GHz Laser-Driven Semiconductor Switches With Performance Rate Up To Nanosecond (1010)

Maxim L. Kulygin Gregory G. Denisov Ksenia Vlasova Evgeny Novikov Shmuel Salaetdinov Nikolay Andreev Alexander Tsvetkov Serguei Shubin Mikhail Khozin Dmitry Sobolev

Institute of Applied Physics, Nizhny Novgorod, Russian Federation

Laser-driven microwave switches are based on an induced photoconductivity effect in semiconductors changing properties of resonant systems they are built-in. The prospective applications often require switching rapidness up to nanoseconds and coherence of output pulse packets between each other. We have observed that the switches demonstrate at least nanosecond level of performance. Also they are able to work with lasers of different wavelengths and pulse durations.