This work presents a way to depress the leakage current, and thus to improve circuit’s efficiency. It is achieved when we alter the doping level of the p-type layer below the device in order to control the gain of this parasitic bipolar, which, in its turn, would affect the leakage current. We compare between two fabrication methods that alter the doping of the p-type layer – implanting a p-type buried layer, or changing the doping concentration of the deposited Epitaxial layer.
