This paper presents a load-pull harmonic investigation of high efficiency GaN power transistors by using a mixed-signal active load-pull system. The advantages of the GaN technology of high power density and high efficiency are best exploited when the optimum fundamental and harmonic terminations are provided to the transistor. The high speed of the system, and its capability to control up to three harmonic impedances, are used to search for the optimum termination in a fast and effective manner