Micran Research & Production Company, Tomsk, Russian Federation
This paper presents a 12-26 GHz GaAs MMIC passive frequency doublers. The original topologies of the frequency doublers were designed. MMICs were produced using GaAs Schottky diodes technology (“Micran†fab). The circuit is designed for a nominal value of input power of +15dBm, a conversion loss of 15 dB.
