A 93.9 - 102.5 GHz Colpitts VCO Utilizing Magnetic Coupling Band Switching in 65nm CMOS (1112)

Samuel Jameson Eran Socher
Tel Aviv University, Tel Aviv, Israel

This paper proposes a modified differential Colpitts VCO topology in CMOS 65nm technology. This VCO achieves a large tuning range of 8.6 GHz between 93.9 - 102.5 GHz by using switched magnetic coupling at the gate inductor. The output power peaks at 95 GHz with -4 dBm and the average phase noise is -85 dBc/Hz at 1 MHz offset. The VCO uses a silicon area of 0.18 mm2 including pads and has a very low DC power consumption between 5.4 and 21.6 mW.









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