Two fully integrated laterally diffused MOS (LDMOS) class AB power amplifiers (PA) are presented. The single stage PA has an output power of 31.4 dBm at 3.8 GHz. A small signal gain of 5.2 dB and a maximum drain efficiency (DE) of 24.3 % are also achieved, using a 9 V supply. The two stage has an output power of 33.3 dBm at 3.9 GHz. A small signal gain of 9 dB and a maximum drain efficiency (DE) of 10.5 % are also achieved, using a 9 V supply.
