Comprehensive Comparison of Integrated Temperature Sensors in CMOS-SOI Technology (1136)

Maria Malits Yael Nemirovsky
Technion - Israel Institute of Technology, Haifa, Israel

This paper reviews two integrated temperature sensors available in CMOS-SOI technology: lateral PN diode and a standard MOSFET. Experimental results indicated that both can be used to implement temperature sensors with high accuracy, after a suitable calibration. Despite the linear behavior of both sensors the lateral diode has higher sensitivity, but a narrower useful temperature range and higher low frequency noise.









Powered by Eventact EMS