High Efficiency Doherty Power Amplifier Design using Enhanced Poly-Harmonic Distortion Model (1147)

This paper presents new identification methodologies dedicated to packaged transistor behavioral modeling. Using the background of the Poly-Harmonic Distortion (PHD) model formalism, the extension of the model kernels description up to the third order makes the behavioral model more robust and accurate for a wide range of impedance loading conditions, which is a primordial when designing a High Power Added Efficiency Doherty Amplifier.