Self-Heating Effects in CMOS-SOI-NEMS Transistors for Uncooled Passive IR sensors (1191)

Novel uncooled thermal sensor based on a suspended transistor(TMOS)made in standard CMOS-SOI process and released by post-etching. The transient Self-heating thermal effect analysis of TMOS sensors is presented. This work establishes an analytical analysis of a novel approach reducing the self-heating thermal effect in TMOS sensors. This is achieved by a bridge-like circuit and utilizing a sensor and a reference device with similar thermal capacitance and different thermal conductivity.