Large-Signal Modeling of GaN Devices with Emphasis on Trapping Effect and Simulation Validation

This paper will present the recent development of large-signal modeling cum PA design based on Dynax GaN HEMT devices. A modified Angelov model is used to model the pulse I-V data. Improved modeling results to address the trapping effect will be given together with new model parameter extraction methodology. A new Large Signal model purpose with trapping effect. Design Power Amplifier in the purpose model and compare with the measurements with old large signal model.