This paper presents the design and measured results of a 2-stage, wideband, power amplifier fabricated on Qorvo’s QGaN15, 0.15μm 4-mil GaN-on-SiC process. Accurate
non-linear model and thermal-aware design techniques have resulted in state-of-the-art performance while maintaining high device reliability. The amplifier produces greater than 5 W of output power, 14 dB large signal gain and 20% PAE over the 2-19 GHz band.
