TOWARDS LOCAL NANOSCALE MAGNETIC MEMORY UTILIZING MAGNETIC NANO PARTICLES AND THE CISS EFFECT

With the increasing demand for miniaturization, nano-structures are likely to become the primary components of future integrated circuits. Different approaches are being pursued towards achieving efficient electronics, among which are spin electronics devices (spintronics). Realizing spintronics devices should result in reducing the power consumption and open opportunities for new regime of electronics devices.

A new, promising, effective approach for spintronics has emerged, using spin selectivity in electron transport through chiral molecules, specifically, molecules with a helical secondary structure (Chiral-Induced Spin Selectivity - CISS effect). Recent charge-transfer studies indicate that chiral molecules act as an efficient spin filter.

This approach has been used to show a proof of concept for a new type of Si compatible chiral based magnetic memory device. In principle, this type of devices should be smaller and faster than current magnetic memory technology. However, so far chiral based magnetic memory was established only at micro-scale size and in low temperatures¹.

Using ferromagnetic nano-platelets (FMNPs), which single domain, we can go down to the nanometric scale devices and up to room temperature working conditions.

In this talk, I will present a room temperature embedded magnetic memory device based on FMNPs. These can be manipulated by applying current through hybridized nano structures of chiral molecules and FMNPs showing hysteretic characteristics.

1. Dor, O. B. et al. A chiral-based magnetic memory device without a permanent magnet. Nat. Commun. 4, (2013).