This SEM micrograph image shows Electrical Fuse (eFUSE) bits, on silicon substrate. Each "glass" structure is one bit which composed with a poly silicon layer on top of the silicon substrate.
eFUSE is a One-Time-Programmable (OTP) solution for System-on-Chip (SoC) Integration. Programming of an eFUSE block is normally done by driving relatively high current pulses through its submicron dimension fuse structures (narrow section). The correct trimming of the voltage, as well as the resulting current and the pulse duration of the blowing electrical pulse is critical for achieving an accurate and reliable code during operation of the product in the field.
Programmed eFuses are electrically high resistance due to the short between two sides of the narrow section, while unprogrammed eFuses remain in a low resistance state due to the disconnection between the two parts of the fuse.
* This image captured with Hitachi S-4700 SEM.
