Characterization of a mesa-type extended wavelength InGaAs focal plane array
Electrical and Electronics Engineering, Middle East Technical University
A large format (640x512) short wavelength InGaAs infrared photodetector focal plane array (FPA) with cut-off wavelength of 2.65µm at room temperature has been fabricated. The detector epilayers consisting of In0.83Ga0.17As absorber were grown on InP substrate by solid source molecular beam epitaxy. Linearly graded InGaAs buffer layer was utilized and mature InGaAs / InP material system provided a high uniformity. Detailed characterization experiments including dark current analysis, detectivity, responsivity and uniformity measurements were performed.
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