Extended Short Wavelength Infrared InGaAs Photodetectors

This talk presents a review of the status of the extended short wavelength infrared (SWIR) InGaAs photodetectors as well as the detailed characteristics and performance assessment of large format InGaAs focal plane array (FPA) with a cut off wavelength of 2.5 um. The focal plane array manufactured with the molecular beam epitaxy grown epilayer structure has displayed very good performance at both pixel and FPA levels with excellent uniformity and pixel operability showing the promise of the technology as an alternative to SWIR HgCdTe sensors.