Semiconductor nanowires (NWs) are one of the most promising building blocks for near future nano-electronics. The fabrication of nanowires is categorized into two main groups: bottom up approach, where the wires are grown by vapor-liquid-solid (VLS) chemistry, and the top down approach where the wires are patterned using standard microelectronic techniques. In this talk I will describe our recent studies of dopant profiles, electrical junctions and electronic states in single crystalline and poly crystalline Si NWs [1-3].
[1] E. Koren, et al., Nanoletters, 11, 2499 (2011).
[2] I. Amit et al., Nanoletters, 13, 2598 (2013).
[3] I. Amit et al., Nanoletters, DOI: 10.1021/nl5024468, (2014).
