CHEMICAL EPITAXY OF CADMIUM CHALCOGENIDE THIN FILMS ON GaAs

Ofir Friedman 1,2 Alexander Upcher 2 Tzvi Templeman 1,2 Dor Korn 1 Vladimir Ezersky 2 Yuval Golan 1,2
1Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva, Israel
2Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer-Sheva, Israel

We present chemical solution deposited cadmium chalcogenide thin films with a well-defined orientation relationship with the monocrystalline substrate,1, 2 which allow to predict and control orientation and morphology of the films. CdS and CdSe films were chemically deposited on (100), (111)A and (111)B oriented GaAs substrates and characterized by analytical transmission electron microscopy, high-resolution scanning electron microscopy and x-ray diffraction. Both CdS and CdSe showed phase change from initial zinc blende at the interface to the stable wurtzite phase when deposited on GaAs(100). Furthermore, the importance of surface polarity was demonstrated for deposition on GaAs(111)A and GaAs(111)B. While in the case of CdS monocrystalline were formed only on GaAs(111)B, CdSe monocrystalline films were obtained also on GaAs(111)A. The monocrystalline films had wurtzite structure, with the c-axis oriented perpendicular to the substrate surface. In addition, the films showed high densities of stacking faults which are attributed to the well-known polytypism in CdS and CdSe.3

1. O. Friedman, A. Upcher, T. Templeman, V. Ezersky and Y. Golan, Journal of Materials Chemistry C, 2017, 5, 1660-1667.

2. O. Friedman, D. Korn, V. Ezersky and Y. Golan, CrystEngComm, 2017, 19, 5381-5389.

3. B. Mahler, N. Lequeux and B. Dubertret, Journal of the American Chemical Society, 2010, 132, 953-959.









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