Dry Etching processes are becoming more significant and valuable as the VLSI industry advances. The
growing variety and number of layers, and the decreasing tunnel scales of only 14-22nm nowadays –
raise the need for a cleaner, qualitative and precise Dry Etch process. The Qualification for such Dry
Etch process tools need to be done in a way that will predict the wanted outcome in the best way. That
is done in a means of zero particles, stable and exact Etch Rate and a matching Etching Profile to the
development center demands.
This thesis follows the qualification procedure of a Hitachi M-712E Dry Etch tool for the Hardmask
Etching Processes in Intel’s advanced technology, and the trouble-shooting processes and experiments
done in order to successfully pass all of the required audits and statistical tests.
During the tool’s qualification process, different ways to control the Etch Rate was found and tested, and
several manners of affecting Etch Rate profile was examined. The tool’s Etch Rate was then adjusted by
using different conditioning processes and passed Sequential Test, and the Etching Profile got fixed
carefully by Electrode replacement and conditioning until an accepted correlation of 91% was received.
Polymer building defects were revealed by accident and eliminated by full tool groundings and RF shield
replacements. Tool is now qualified for the advanced technology and is up for processing.