ELECTRICAL PROPERTIES AND HYSTERETIC BEHAVIOR IN ALL-INORGANIC PEROVSKITE GUIDED NANOWIRES

All-inorganic lead halide perovskite nanowires (NWs) have been gaining increasing attention due to their relative stability over hybrid organic-inorganic perovskites and fairly simple preparation methods. These all-inorganic perovskite nanowires possess interesting and intriguing properties, making them suitable candidates for exploration of different scientific phenomena in addition to integration into various nano-devices. Recently, we reported the horizontal and aligned surface-guided growth of CsPbBr₃ NWs with a uniform crystallographic orientation on flat and faceted sapphire surfaces, allowing systematic study of their different optical, electronic and optoelectronic properties. One of the most prominent differences between halide perovskites and conventional semiconductors is their “soft” and dynamic crystal structure, owing to their relatively weak ionic bonding, which leads to different phenomena such as extremely long diffusion lengths and hysteretic electronic behavior. In this work, we explore the electrical properties of the surface-guided CsPbBr₃ NWs by integrating them into field-effect transistors (FETs) and studying their different characteristics such as charge-carrier concentration and field-effect mobility. As expected, a strong hysteretic behavior was observed; this behavior can be utilized for developing novel memory devices, like memristors, but with different characteristics from those based on classical semiconductors.