Transition Metal Dichalcogenides: Synthesis, Doping and Alloying

The tremendous interest in 2D materials over the last decade is driven by their rich physics and device performance that hold great promise for future technological applications. The physical and chemical properties of these materials highly differ from their 3D counterpart. Therefore, the rational synthesis of atomic-films with the desired structure (number of layers, chemical composition, phase, etc.) is a critical prerequisite to fulfill the potential of these exceptional materials.

In this talk, I will address the main challenges in the synthesis of 2D materials in general and transition metal dichalcogenides (TMDs) in particular at the single- or few-layer level. I'll start by reviewing current methodologies and then will elaborate on the methodologies used in our laboratory, which are based on chemical vapor deposition. In this scheme, the growth of continuous single-layer MoS₂ and WS₂ on the centimeter square scale, will be described. Moving on from bare TMDs, I will present our methodologies to grow lateral and vertical heterostructures as well as doped and alloyed atomic-films. I will finalize by describing our efforts to grow complex 3D heterostructures, made of 2D materials, for various applications.