Electromechanics of Group III-Monochalcogenides

Two-dimensional (2D) gallium sulphide (GaS), gallium selenide (GaSe), and gallium telluride (GaTe), belonging to the group-III monochalcogenide family, have shown promising electronic and optoelectronic performance over graphene and monolayer molybdenum disulphide (MoS2).

In this talk, I will introduce our work on characterizing the elastic properties and breaking strengths of suspended two-dimensional suspended nanosheets of GaS, GaSe, and GaTe, using atomic force microscopy. These materials have shown high breaking strain and stress, which is comparable to materials commonly used in stretchable electronics.

Furthermore, nano-electromechanical system (NEMS) resonators based on 2D group-III monochalcogenide materials have been built and shown excellent performances as oscillating elements. These resonators have exhibited wide bandwidth (hundreds of kHz) and high-frequency (in the MHz range) operation. Reduced order theoretical model has been built and demonstrated excellent agreement with the experimental results of the 2D resonators.