MEASURING THE MEAN INNER POTENTIAL OF AL₂O₃ SAPPHIRE USING OFF-AXIS ELECTRON HOLOGRAPHY

The mean inner potential (MIP) of a single crystal α-Al₂O₃ sapphire was measured using off-axis electron holography. To measure the MIP, we use mechanically polished wedge specimens for transmission electron microscopy (TEM). The wedge specimen, chosen here at an angle of approximately 45°, allows to determine the MIP by measuring the gradient of phase variations of the reconstructed electron wave over extended regions across the sample. The angle of the wedge was measured to an accuracy of better than 1° by two methods: perpendicular sectioning in a focused ion beam for direct measurement by TEM ; by a non-destructive approach of confocal optical microscopy. Our measurements¹ concluded that the MIP of sapphire is V₀ = 16.90 ± 0.36 V. The measured MIP of sapphire reflects its degree of ionicity, which lies between theoretical calculations based on electron scattering factors of charged and neutral isolated atoms obtained by Dirac–Fock calculations. Our MIP measurements tend to the expected value for this predominantly ionic material. To account for chemical bonding and the role of the crystallographic plane at the surface of the sample, we compared the experimental measurements to density-functional-theory calculations of the MIP. Calculations of α-Al₂O₃ slabs cut along (0001) and (1–100) planes obtained MIP values of 15.7 V and 16.7 V, respectively.

1. Avi Auslender, Mahdi Halabi, George Levi, Oswaldo Diéguez, Amit Kohn

“Measuring the mean inner potential of Al₂O₃ sapphire using off-axis electron holography”, Ultramicroscopy, 198, 18-25 (2019).