Invited
Ferroelectric memristors

Advancement of information and computing technology requires low power and high speed non-volatile memory devices. Memristors with excellent scalability have the potential to revolutionize not only memory devices but also neuromorphic computing. Memristive devices have been mostly focused on the use of binary oxides as the resistive switching materials and filaments as the switching mechanism. In this talk, I will first discuss the interface type memristors, especially based on ferroelectric materials. In the second part of the talk, I will discuss the underlying switching mechanisms in different ferroelectric material systems such as BaTiO3 and BiFeO3. It was found the ferroelectric memristive switching behavior is controlled the interface, defects and power dissipation. These findings provide insight in understanding the roles of defects and interface in controlling ferroelectric memristive switching and offer guidance to design ferroelectric memristors with enhanced performance.