Invited
Emerging engineering strategies to enhance ferroelectricity in hafnia-based thin films

Ferroelectricity in hafnia-based thin films has attracted increasing interest from both academia and industry owing to its dimensional scalability as well as compatibility with the complementary metal oxide semiconductor technology.[1-3] The ferroelectricity in hafnia-based thin films has been aimed at nonvolatile memory applications for data storage and has been intensively studied during the first decade of the research on hafnia-based ferroelectrics. More recently, other engineering technologies, such as the utilization of morphotropic phase boundary (MPB) and artificial superlattice/nanolaminates, were suggested.[4,5] In hafnia-based thin films, the first suggested MPB refers to the boundary between the tetragonal and orthorhombic phases, and a high dielectric constant could be achieved by controlling the film thickness and doping concentration. Moreover, the artificially fabricated superlattices/nanolaminates of hafnia and zirconia have been studied to improve the ferroelectricity or reliability. In this presentation, the above-mentioned emerging engineering strategies of hafnia-based ferroelectric thin films are reviewed based on previous results.

[1] T. S. Boescke et al. Appl. Phys. Lett. 99, 102903 (2011).

[2] M. H. Park et al. Adv. Mater. 27, 1811 (2015).

[3] U. Schroeder and M. H. Park et al. Nat. Rev. Mater. 7, 653 (2022).

[4] M. H. Park et al. ACS Appl. Mater. Interfaces 10, 42666 (2018).

[5] M. H. Park et al. Appl. Phys. Rev. 6, 041403 (2019).